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  • LMG3526R030: Separate Eon and Eoff data for LMG3526R030, or LMG3522R030, or LMG3422R030

    Part Number: LMG3526R030
    Other Parts Discussed in Thread: LMG3422R030, LMG3522R030

    Hi, Could you please share the separate Eon and Eoff data curve for LMG3526R030, or LMG3522R030? Even for LMG3422R030, its Eoff data is hard to extract from the datasheet…

  • UCC27324: UCC27324

    Part Number: UCC27324
    Other Parts Discussed in Thread: UCC28950,

    Hello,

    My name is Doğu Bora Yalçın, and I am employed as an Analog Design Engineer at ASELSAN. Presently, we are utilizing the UCC27324 Non-Inverting 4-A/4-A Dual-Channel Low Side Gate Driver…

  • LMG1210: Driving GaN HEMT with negative threshold voltage

    Part Number: LMG1210
    Other Parts Discussed in Thread: LM5112

    Dear TI-development team,
    i am currently writing my bachelor thesis and would like to use the LMG1210 to control a switching amplifier in the half-bridge topology. Since I would like to utilise…

  • UCC28065: Calculating f_min given output wattage and AC input voltage

    Part Number: UCC28065
    Other Parts Discussed in Thread: UCC28070

    Hi there, my name is Kian Fotouhi. I'm an electrical engineering student working on a high-power audio amplifier that will need a transition-mode boost PFC. The specifications will be:…

  • LAUNCHXL-F280049C: MOTORCONTROL + GAN FET example.

    Part Number: LAUNCHXL-F280049C

    I want to start a new design with MOTORCONTROL-SDK 049C with GAN FET.

    Can you tell me the example with these transistors. What is the maximum PWM frequency that can be expected?

    I'm planning up to 40 amps RMS. I think…

  • [FAQ] How do I detect over current fault more quickly with low-side current shunt measurement required for SiC or GaN switches?

    Written by: Charles Barsh

    The electrification of automobiles is rapidly increasing, and as it does, there are more advanced systems integrated into these vehicles. These electrified vehicles contain sensitive GaN and SiC switches that are susceptible…

  • [FAQ] How Do I Choose the Best Non-isolated Gate Driver for Electric Vehicle (EV) Charging Station Topologies?

    Electric vehicle (EV) charging systems are of two types: AC and DC. The AC charging system has to interface with the EV's internal on-board charger (OBC) before reaching the battery. The DC charging system interfaces with an external Electric Vehicle…

  • LM5156: Can boost controller, LM5156 and LM5122 drive GaNFET?

    Part Number: LM5156
    Other Parts Discussed in Thread: LM5122

    Dear TI Team,

    I was planning to design a boost converter using LM5156 due to its dual random spread spectrum feature. The detailed specifications and component selection are listed below:

  • LMG3522R030-Q1: Series stack of GaN FETs

    Part Number: LMG3522R030-Q1

    Is anybody knows how this "Utilize series stack of GaN FETs on secondary side of CLLLC DC/DC Converter" works?

  • トーテム・ポール PFC ベースの電源設計で GaN を採用して高効率を実現する方法

    最新の産業用システムの大半は AC/DC 電源を採用しています。この種の電源は AC グリッド (電力網) からエネルギーを取り入れ、適切にレギュレーションされた DC 電圧として電気機器に電力供給します。世界全体で電力消費量が増加している中で、AC/DC 電力変換プロセスに伴うエネルギー損失は、電源エンジニアが考慮するエネルギー・コスト全体の中で大きなウェイトを占めるようになっています。テレコムやサーバーなど電力消費量の多いアプリケーションの場合はなおさらです。

    GaN (窒化ガリウム) を採用すると…

  • TMS320F280049C: Reference design of TIDA-010210 - 11-kW, bidirectional, three-phase ANPC

    Part Number: TMS320F280049C
    Other Parts Discussed in Thread: TIDA-010210

    May I ask how can I get an evaluation board of this reference design?

  • LMG1205: Voltage undershoot below -0,3V

    Part Number: LMG1205

    Hello together,

    I am still struggling with the undershoot. In the meantime I did several layouts with different paths. The best signals I can get are:

    I measured those with:

    Scope: Tektronix-MSO44 1 GHz

    Probe: Tektronix-TIVP1 (special…

  • LMG3522R030-Q1: LD05V Fails Short

    Part Number: LMG3522R030-Q1

    We are using this part in an LLC resonant converter design, and have had it fail twice during test. The LD05V internal power rail fails short and the FET D-S remains open circuit. The schematic design is pretty much identical…

  • Bare Die Wafers for GaNFETs

    Hello,

    I am into designing a PCB with bare die wafer GaNs. I need a GaN bare die wafer which can work with 100V drain-source voltage and has at least 40A current carrying capacity. Do you have bare die wafer GaN with above mentioned voltage and current…

  • GaN の信頼性を検証するには

    GaN (窒化ガリウム) FET (電界効果トランジスタ) には、効率を向上させ電源のサイズを縮小する特長があり、採用が急速に広まっています。ただし、この技術に投資する前にGaN の信頼性に関して疑問を抱く方もいることでしょう。一方でシリコンに対しては「信頼できるか」と尋ねる人がいない事実も思い浮かびます。結局、新しいシリコン製品は今も継続的に登場しており、電源設計者はシリコン製パワー・デバイスの信頼性にも注意を払っています。

    GaN 関連業界は信頼性に関してかなりの労力と時間を費やしてきました…

  • LMG1210: Shoot-Through Problem

    Part Number: LMG1210
    Other Parts Discussed in Thread: UCC27611

    Greetings to all,

     

    I try to implement H-bridge structure with GaN type mosfets. The driver I am using is LMG1210. I have added the schematic and waveforms. I will try to summarize the problem…

  • LMG3425R050: VNEG cap connection is contradicted in the datasheet

    Part Number: LMG3425R050

    Table 6-1 describes VNEG as "Negative supply output, bypass to ground with 2.2-µF capacitor". Figure 10-1 shows the VNEG capacitor connected to source not ground. Which is correct?

  • LMG3410R050: About further datasheet parameters

    Part Number: LMG3410R050

    Hello

    Can i Please get the Ids on vs Temperature curve for LMG3410R050. Datasheet seems missed that vital information.
    Aslo can you tell me how the normalized Rds on is calculated.
    Aslo i note that Ids rating stated as 12A at…

  • TPS43061: Suitable for Driving LMG5200?

    Part Number: TPS43061
    Other Parts Discussed in Thread: LMG5200,

    I've been looking around for a synchronous boost control IC that might be suitable for driving the LMG5200, and it seems like the TPS43061 might be a good fit. My overall specifications for…

  • UCC256403: Driving GaN

    Part Number: UCC256403

     UCC256403 has high side and low side Gate Drives included. Can it be used to Drive GaN FET as well, assuming we have a level shifter between IC and Actual GaN FET ?

    i am looking at the specific dV/dt rating of HS floating node which…

  • LM5175: External VCC? Ground-referencing high-side drivers?

    Part Number: LM5175

    I am interested in using the LM5175 to drive GaN half bridges that have built-in high and low-side drivers (FBS-GAM02-P-C50). The maximum allowable voltage on the half-bridge control inputs is 5V, and I have a 5V supply on my board…

  • LMG3425R030: Half-bridge GaN Lay-out

    Part Number: LMG3425R030

    Figure 11.1 and 11.2 shows that switching node plane overlaps with power return plane. However, we know that switching node is a noisy plane and will probably make ground plane dirty below it. I have never overlapped my switching…

  • 車載電源技術をより速くさらに先へ

    TIのエンジニアであるPradeep Shenoyは画期的なイノベーションの実現から社員の教育まで、次世代の車載電源技術をさらに前進させることに情熱を注いでいます。

     

    Pradeepはテキサス州北部の自宅でドキュメンタリー番組“Long Way Up”を視聴しながらも、頭の中では、エピソード内で描かれるあるシーンに思いを巡らし、自分の思考を解決モードに切り替えていました。それは、俳優ユアン・マクレガーが友人とハーレーダビッドソンの電動バイクに乗って旅をするなかで、バイクのバッテリ充電と奮闘するという点です…

  • HEV/EVで高周波数と堅牢性を実現する車載GaN FET設計

    Other Parts Discussed in Post: LMG3522R030-Q1

    電気自動車(EV)の普及に向けて走行距離、充電時間、価格といった消費者の懸念に対処するために、世界各国の自動車メーカーは、サイズ、重量、部品コストを増やすことなく、バッテリ容量を増やして充電を高速化する方法を求めています。

    バッテリを家庭用ACコンセントや公共または商用の電源設備から直接再充電することを可能にするEVのオンボード充電器(OBC)は、急速に変化を重ねています。充電速度を速める必要性から電力レベルが3…

  • LMG1205: LMG1205 HO "latch up" malfunction, stays "high" during ~300 ns for apparently no resaon during high current, high dv/dt situations

    Part Number: LMG1205
    Other Parts Discussed in Thread: LMG1210

    Hi,

    we are having a critical issue with LMG1205 during high output current situations.

    Basically, we have measured that the HO pin of LMG1205 turns on "high" for apparently no reason, after…